Category: Process Data

The market for semiconductor lasers is becoming active as a light source for 3D sensing technologies such as LiDAR, which are required for autonomous driving. As one of them, we will introduce a dry process for VCSELs (Vertical Cavity Surface Emitting Laser), which has merits such as miniaturization and energy saving. VCSEL fabrication flow 1. Epi growth On a GaAs (gallium arsenide) substrate, AlGaAs / GaAs layers are epigrown as a laminated structure including a DBR (Distributed Bragg Reflector) multilayer film consisting of several tens of pairs or more and an active layer. 2. Patterning & Mask forming Form a mask pattern to form the epi layer into a column called a mesa 3. Patterning Mesa Patterning Mesa by dry etching Process technology for VCSEL Introduction of Etching module 4. Forming active layer & encapsulation A specific AlGaAs layer designed near the active layer is oxidatively narrowed by wet oxidation (this oxidative narrowing layer is a very important layer that influences the characteristics of the VCSEL as a current and light confinement structure). It also forms a protective film on シャッフルカジノ 入金方法ide wall of the mesa. 5. Forming electrode Electrodes are formed on each of the n-type and p-type layers. Contact Us /en/contact/elec_inquiry/

Introducing the dry etching technology required for the VCSEL process. VCSEL Mesa process Chlorine-based gas is used for etching group III-V compound semiconductors such as GaAs used in VCSELs. Since reactive-based conditions are used for AlGaAs / GaAs multilayer films, it is difficult to control シャッフルカジノ 入金方法hape and in-wafer uniformity. Furthermore, in etching compound semiconductors, it is difficult to achieve both shape and in-wafer uniformity control based on process conditions alone. Therefore, the NE dry etching equipment uses the ISM (ICP with Static Magnetic field) method for the antenna structure. Antennas using the ISM method can optimize the plasma distribution, and a very uniform distribution of 3% or less can be obtained with GaAs wafers. シャッフルカジノ 入金方法hape distribution based on the actual epi structure is also uniform. For mesa depth control, the etching depth can be controlled with high accuracy by using the IEP (Interferometry End Point) system. シャッフルカジノ 入金方法tate of etching can be grasped from the interference waveform obtained by using this system. By counting the number of DBR pairs while monitoring this waveform, etching can be stopped at any depth. Contact Us　/en/contact/elec_inquiry/