シャッフルカジノystem
Cluster-type PE-シャッフルカジノystemCME-シャッフルカジノ/400
CME-200E/400 is the most suitable model in the PE-シャッフルカジノeries production system for deposition of Si films with application as Insulator or barrier layers.
Features
- High-density plasma process with high-frequency(27.12 MHz) power supply.
- High-quality film using SiH4 precursor: SiO2, SiNx, SiON, a-Si, also for TEOS process for SiO2 film.
- Chamber Cleaning with NF3+Ar plasma.
- Supports the heater for low-temperature deposition of organic EL.
- Substrate size up to 200 x 200mm for CME-シャッフルカジノ, Max. 300 x 400mm for CME-400.
Applications
- Power device
- LED, LD, High-speed device
- Organic LED
- Solar cell
- MEMS
