Technical Journal

Kenta DOI, et al., ULVAC, Inc.

Our new plasma source "ISM-duo" enables the across-wafer etching rate uniformity of our uGmni etching module to be controlled. ISM-duo consists of an RF current distribution unit and two separate ICP antennas placed coaxially so as to control the spatial distribution of plasma generated シャッフルカジノ 初回入金ボーナスhe process chamber. The RF current distribution to each antenna is performed at an arbitrary ratio without depending on process parameters such as gas type, and changing the distribution ratio does not disturb impedance matching. These features enable a stable operation of the etching rate uniformity control through the optimization of the RF current distribution ratio for various processes. ISM-duo delivers a new process tuning knob that enlarges the process window in our etching module.

Masanori SHIRAI, et al., ULVAC, Inc.

We have developed the radical assist sputter epitaxy (RaSE) method to enable epitaxial growth of gallium nitride (GaN) by sputtering and the "SEGul" system for mass production. Compared to the metal organic chemical vapor deposition (MO-CVD) method, which is a common GaN film formation method, the RaSE method has the advantages of a low deposition temperature and a low material cost when forming epitaxial GaN thin films. The MO-CVD method uses organometallics and toxic gases such as NH₃ as raw materials at a formation temperature of about 1000℃. In contrast, the "RaSE" method uses common materials such as Ga, N₂, and Ar, and GaN formation can be performed at relatively low temperatures of 700℃ or lower. It can also be applied to the formation of high density n-type GaN thin films with n-type carrier density シャッフルカジノ 初回入金ボーナスhe 1x10²⁰ cm^-3 range by using an additional sputtering source for doping. シャッフルカジノ 初回入金ボーナスhis report, we describe the characteristics of GaN thin films formed by the RaSE method, as well as the mass production system "SEGul" which can handle up to 8-inch wafer sizes.

Junsuke MATSUZAKI, et al., ULVAC, Inc.

Organic light emitting diode (OLED) devices are applied to various displays such as smartphones, monitors, and TVs, but it is necessary to improve the cost and lifetime of such displays. Top emission type OLEDs have high light extraction efficiency but require higher transmission and lower resistance cathode electrodes, so we have developed a low damage sputtering process for these OLED devices.
Sputtering processes with high temperatures and lots of particles not only reduce device performance, but also reduce mass production yields. That is why ULVAC's sputtering process concepts for these OLED devices are "low damage," "low temperature," and "low particle."
シャッフルカジノ 初回入金ボーナスhis paper, we analyzed the sputtering damage factor related to device performance and established a sputtering process that can reduce the damage factor. The drive voltage and efficiency of OLED devices using the low damage sputtering process was the same as that of the reference vapor deposition device, and the lifetime was more than 20% longer.

Fumiaki ISHIGURE, et al., ULVAC, Inc.

We have developed a method of micro arc oxidation treatment (VACAL®-Z) as a surface treatment for aluminum alloy used in vacuum equipment using corrosive gases, such as CVD equipment. The oxide layer formed by VACAL®-Z had a three layer structure of crystalline γ-alumina. In addition, we have devised and made possible a step processing method for treating the entire surface of large objects, such as vacuum production equipment for flat panel displays, by VACAL®-Z.

Atsuaki HASHIMOTO, et al., ULVAC, Inc.

We have developed a new batch-type isotropic gas etching system that does not utilize H radicals. The isotropic gas etching process is used in semiconductor manufacturing to etch pattern structures and requires high aspect ratio etching without causing damage to the underlying layer. Our previous release, RISE-300, was a batch-type gas etching tool that utilized H radicals and was easy to handle due to the absence of highly corrosive gases like HF. However, it was difficult to control the etching distribution within each batch. In recent years, conventional processes have become insufficient to meet the performance requirements of device manufacturers. Our new batch-type isotropic gas etching process, which does not utilize H radicals, outperforms conventional methods シャッフルカジノ 初回入金ボーナスerms of wafer-to-wafer uniformity and step coverage. Additionally, this new process allows for precise control of etching distribution withシャッフルカジノ 初回入金ボーナスhe wafer plane.

Yoshinobu MURAYAMA, et al., ULVAC CRYOGENICS, Inc.

The size of glass substrates in organic light emitting diode (OLED) vapor deposition equipment has increased, the mainstream has changed from conventional G6H devices to G8H devices, and the vapor deposition equipment itself has also become larger. Therefore, cryopumps used as high vacuums pumps will also be increased in size from 20 inches to 22 inches, and pumping speed will increase. シャッフルカジノ 初回入金ボーナスhis paper, we introduce the history of 22-inch cryopump development and a technology that realizes both cost reduction and energy saving in a cryopump system that will be adopted シャッフルカジノ 初回入金ボーナスhe G8H シャッフルカジノ 初回入金ボーナスhe future.

Jun WATANABE, et al., ULVAC, Inc.

The problem with organic light-emitting diode (OLED) displays is that their service lifetime is affected by impurities in vacuum equipment. Therefore, equipment manufacturers need to ensure the cleanliness of their equipment. We developed a technology to evaluate trace amounts of water-soluble impurities in vacuum equipment by using ion chromatography (IC). As a result, we established our own simple cleanliness evaluation technology.
By using this evaluation technology to monitor and take countermeasures against residual ions シャッフルカジノ 初回入金ボーナスhe equipment during each process from manufacturing to delivery, we have been able to manufacture equipment with high cleanliness that meets the required quality.
In addition, we conducted device fabrication and service lifetime tests on OLED deposition equipment to evaluate the impact of equipment components on device lifetime. The evaluation of devices exposed to fluorinated resin-coated cables suggested that the factor causing service lifetime degradation was a gas containing C-F. Meanwhile, it was found that the devices can still be used as device components by reducing the amount of impurities through appropriate cleaning processes. We will contribute to further quality improvement of OLED production equipment by utilizing this technology.

Toshihiko NAKAHATA, et al., ULVAC, Inc.

When radio frequency (RF) power sources are used on both the cathode and stage sides, effective stage bias can be achieved by controlling the RF phase. We found that this can be ascertained from the voltage peak to peak (Vpp) curve at each phase position.
The number of layers in 3D-NAND flash memory is increasing, so the processed height of each layer must be reduced to maintaシャッフルカジノ 初回入金ボーナスhe total device height. The height of etch-stop layers must also be reduced, and a filling process is required for insulator materials. ULVAC had knowledge of stable RF sputtering processes, but we were not able to produce an adequate filling performance. We knew that the stage bias process used in conventional ULVAC technologies, such as high coverage ionized sputtering (HiCIS), was a good candidate for this filling process. However, it is only used for metal layers, which have lower ionized energy materials. We tried to combine both cathode and stage RF processes, but the filling performance was not stable and we could not control the RF processes together. In order to solve these issues, we found that phase control is one of the key factors to not only use matching control but also control stage bias effectiveness. Also, filling performance can be controlled by selecting the correct phase position for both the cathode and stage RF output. It makes further possibility for sputter process applications.

Satoru TAKASAWA, Kazuhiro SONODA, Kazuhiko TONARI, Masaki UEMATSU, and Yutaka KOKAZE

We have developed pre-treatment, Cu sputtering, and CVD-Co technologies for semiconductor Cu interconnect technology. A new remote plasma process シャッフルカジノ 初回入金ボーナスhe pre-treatment technology suppressed damage to low-k films, and uniformity シャッフルカジノ 初回入金ボーナスhe wafer surface and stability of continuous treatment were obtained. The new CVD-Co process enabled uniform film formation at a film thickness of 1.5 nm and resulted in good step coverage performance in a fine pattern. シャッフルカジノ 初回入金ボーナスhe future, we expect that these interconnect formation technologies will be applied in logic and memory devices.

Takeshi MASUDA and Takehito JIMBO

Phase change random access memory (PCRAM) is a type of non-volatile memory that is embedded in semiconductor devices and has been put to practical use as storage class memory (SCM) with high speed and large capacity at a lower cost than DRAM. It is also expected to be applied to neural computing, which mimics the neural circuits of the human brain.
In order to realize PCRAM, it is essential to develop film deposition technologies and processes to realize appropriate film properties and mass productivity for memory elements, selector elements, and electrode materials (carbon is widely used). シャッフルカジノ 初回入金ボーナスhis paper, we will explaシャッフルカジノ 初回入金ボーナスhe status of technology development for depositing each of these elements, and also present the evaluation results of a prototype AI device using CVD technology for applications in neural computing.

Takuma ARAYA, Tetsushi FUJINAGA, Motoshi KOBAYASHI, Yoshitaka GOUSHI, Harunori IWAI, Hungchun PENG, Szuhsun CHENG, Huang-Choung CHANG

Optical films can select transmittance and reflectance at certain wavelengths by a combination of thin films with different refractive indices. Such films have long been used as anti-reflection (AR) films, specific wavelength transmission filters, and so on. シャッフルカジノ 初回入金ボーナスhe past, optical films were deposited on certain substrates and assembled with electronic devices. However, with the miniaturization of electronic devices, it has recently become more common to assemble optical films on wafers and electronic devices before dicing. As a result, a deposition system for optical films is required to allow wafer processing and particle control at the semiconductor level. We developed a sputtering system, ULDiS-1500PHL, for wafers, and present a system and process especially for infrared band pass filters.

Taku HANNA, Mitsuru UENO and Motoshi KOBAYASHI

Transparent amorphous oxide semiconductors (TAOS) typified by amorphous IGZO (In-Ga-Zn-O) are promising materials for next-generation electronic devices. They can provide homogeneous and large area thin films inexpensively by using sputtering equipment for mass production. The special properties of TAOS-based devices, such as their amorphous structure, high mobility and low leak current, may have the potential to replace conventional Si-based technology. Development of new TAOS materials which have high mobility and high reliability is essential for oxide-based technology to become widespread. シャッフルカジノ 初回入金ボーナスhis paper we describe Target H, which we developed as a high mobility oxide semiconductor sputtering target. A thin film deposited by DC (direct current) magnetron sputtering shows high Hall mobility above 25 cm2/Vs and an amorphous structure regardless of the partial pressure of oxygen during film deposition. BCE-type TFTs (thin film transistor) using Target H and IGZO were demonstrated. The estimated mobility of Target H was 34.8 cm2/Vs, which is 3 times greater than that of IGZO.

Shinji YAMADA and Toshiyuki NAKAMURA

Presented シャッフルカジノ 初回入金ボーナスhis report are low-damage dry etching technologies for Gallium nitride (GaN) power devices using inductively coupled plasma reactive ion etching (ICP-RIE) equipment with a newly-developed high-frequency RF power supply. GaN vertical trench-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are promising devices for realizing high-breakdown voltage and low on-resistance. However, generally, when a trench-gate structure is fabricated by ICP-RIE, these properties degrade due to plasma-induced damage which is formed near the GaN surface. Our RF power supply contributes to the reduction of this damage by outputting accurately-controlled and ultimately-low bias power. This report introduces an overview of the RF power supply and recent achievements using the same

Takehito JIMBO, et al., Institute of Semiconductor & Electronics Technologies

We describe シャッフルカジノ 初回入金ボーナスhis article MEMS sensors for automotive applications and related functional material films, a deposition technology for which we have developed. The performance of automobiles is enhanced by their control systems, leading to reduced fuel consumption, higher safety, and other advantages. A MEMS sensor is an essential component of a control system because it can detect environmental changes and feed this information back to the system. The importance of automotive MEMS sensors is increasing due to the design requirements for nextgeneration automobiles, such as self-driving and all-electric vehicles. It is anticipated that by applying a variety of functional materials, a MEMS sensor with new functions will be realized. More specifically, this article introduces the PZT and VOx functional material films that have been developed by the authors. Both films are deposited by the sputtering method, demonstrating that films characterized by excellent performance can be obtained by applying a unique sputtering and process technology.

Kanji FURUTA et al., Advanced Electronics Equipment Division

3D sensing devices for autonomous vehicles have seen major technical advances in recent years. Light Detection and Ranging (LiDAR) has emerged as the technology most compatible with these sensors, as it possesses characteristics that promise to enhance the functionality of autonomous driving. Vertical Cavity Surface Emitting Lasers (VCSELs) are economical and compact enough to serve as light sources for LiDAR. Dry process is the key to VCSEL fabrication. However, this fabrication method poses various challenges. To produce these devices, we have been developing a high-uniformity etching technology, along with an Interferometry End Point monitoring system. This article elaborates on シャッフルカジノ 初回入金ボーナスolutions we implemented to address these challenges.

Akihiro YOKOYAMA, et al., Institute for Super Materials

Because the market for lithium ion batteries is expected to grow rapidly, efforts are underway to develop an advanced rechargeable Li-ion battery. One approach for such a rechargeable battery that is attracting attention uses lithium metal as the anode, because the result would be a high-capacity, lightweight battery that is ideal シャッフルカジノ 初回入金ボーナスerms of energy density. However, in order to put a lithium metal anode into practical use, it is necessary to solve the problem of dendrites that occur during repeated cycles of charging and discharging. Other issues that need to be addressed include safety and battery life. Compared to conventional roll-press Li foil, our vacuum evaporated Li film has shown excellent cycle performance. We were also able to stabilize the active Li surface after deposition by applying a "chemical-passivation" process that we developed.

Yoshiaki FUKUDA, et al., Institute for Super Materials

Carbon nanotube (CNT) electrodes vertically aligned on a copper foil substrate have been fabricated by using a thermal chemical vapor deposition (CVD) method. シャッフルカジノ 初回入金ボーナスhe electrode, superior electron conduction paths are formed over the entire electrode. The electron conduction paths are due to the fact that the CNTs are vertically aligned on the substrate with strong adhesion. Such a vertically aligned CNT electrode has been applied to a lithium-ion capacitor (LIC) as a negative electrode material. The fabricated LIC shows high energy density compared to an electric double-layer capacitor (EDLC) to which a commercially available activated carbon electrode material has been applied. This fabricated LIC also demonstrates high power density compared to an LIC to which a commercially available graphite anode has been applied.

Akihiko KOHRA, et al., Institute of Semiconductor & Electronics Technologies

Dramatic changes have been occurring シャッフルカジノ 初回入金ボーナスhe automotive industry. Among the targets of technological development has been the shift to all-electric vehicle (EVs) and fuel-cell vehicles (FCVs). Batteries, motors, and power devices represent the most essential technologies for EVs and FCVs. A power device is a semiconductor element that functions as a switch for converting the electric power. Examples include metal oxide semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Power device technology is currently based primarily on silicon (Si) wafers. Silicon carbide (SiC) and gallium nitride (GaN) are gaining attention as next-generation alternatives due to their high voltage resistant property with low electric resistance, which is well suited to power devices. ULVAC is working on productivity enhancement for thin Si wafer processing equipment, ion implantation equipment for SiC, and process development of activating annealing to form a p-type region in GaN power devices based on magnesium (Mg) ion implantation.

Shogo MOTEKI, Industrial Equipment Division

Magnets are produced by means of many processes, such as the alloy production process, hydrogen embrittlement process, sintering process, and grain boundary diffusion process. To produce the highperformance magnets required for use in vehicle motors, ULVAC provides an appropriate furnace for each process. The "Magcaster‑600" is a melting furnace for the alloy production process for producing magnets with good grinding characteristics. The "FHH series" includes hydrogen furnaces for the hydrogen embrittlement process without exposure to the air. The "FSC series" provides inline-type heat treatment furnaces for シャッフルカジノ 初回入金ボーナスintering and aging processes. The "Magrise series" features heat treatment furnaces for the grain boundary diffusion process used to defuse heavy rare metals into neodymium. This article introduces the features of the line of furnaces manufactured by ULVAC for the production of magnets for installation in vehicle motors.

Kenji KOMURO, et al., Advanced Electronics Equipment Division

With our dry etching equipment, high density plasma (5E10-1E11/cm3) can be generated at low pressure (0.07-13.3 Pa) by ISM (Inductive Super Magnetron) type plasma source, making it possible to achieve a uniform etching distribution using a magnet. シャッフルカジノ 初回入金ボーナスhis issue, we developed dry and wet composite mass production type dry etching equipment for high quality SAW filters. A crucial feature of this device is that it is equipped with hardware that performs a combination of dry etch and wet etch processes in a low dew point environment to reduce the corrosion that is particularly likely to occur in composite metal films.

Satoru TAKASAWA et al., Institute of Super Material

We have developed Cu alloy films with good adhesion to glass and resin substrates. For flat panel display (FPD) applications, particularly wiring material of the next generation high definition TV, high thermal resistance is required. Compared with the Cu/Ti and Cu/Mo films commonly used as thin film transistor (TFT) wiring metals, our newly developed the Cu alloy exhibits higher thermal resistance characteristics. In addition, for printed circuit board (PCB) applications, the new Cu alloy film contributes to cost reduction by simplifying the etching process compared with Cu/Ti film as the general wiring material.

Tatsuhiro NOZUE, et al., Future Technology Research Laboratory

We have investigated the thermoelectric elements using the spin Seebeck effect (SSE), in order to develop the novel thermoelectric device. The multilayered SSE elements of Y3Fe5O12 (YIG) and Pt, [YIG/Pt]n, were fabricated by sputtering. The sample of n = 2 had the SSE coefficient 2 times as large as that of n=1. However, the SSE of n = 3 sample was almost equal to that of n = 2. This enhancement of SSE is considered to be contributed by the spin current enhanced シャッフルカジノ 初回入金ボーナスhe multilayer [YIG/Pt]n.

Ryohei ITO, et al., Future Technology Research Laboratory

S-I-S (superconductor-insulator-superconductor) multilayered structure theory has been proposed to achieve the maximum acceleration gradient of superconducting radio frequency cavities higher than the theoretical limit of conventional Nb cavities. In order to demonstrate this theory, we investigated the optimal deposition condition for reactive sputtering of NbN-SiO2 thin films and the correlation between the deposition conditions and the thin film properties. We finally made a multilayered sample consisting of NbN-SiO2 thin films and bulk Nb substrate, which has good crystalline orientation. Moreover, we clarified that the lower critical field of the multilayered sample was higher than a bulk Nb. In other words, we succeeded in demonstrating シャッフルカジノ 初回入金ボーナス-I-S theory for the first time using a small sample size for measurement purposes.

Tomonari TANAKA, et al., Research & Development

Dry vacuum pumps are used in many production lines, including those for electronic parts and displays. Environmental concerns have led to dry vacuum pumps becoming mainstream thanks to their low power consumption. However, typical dry vacuum pumps with low power consumption tend to have the problem of long pumping down time, since they have a low pumping speed near atmospheric pressure. To solve this problem, ULVAC has developed a new dry vacuum pump series called the LS series that combines high pumping speed with low power consumption. By increasing the pumping speed near atmospheric pressure, ULVAC has realized a dry vacuum pump with high pumping speed that uses the innovative technology developed by the company to reduce power consumption.

Yuusuke MIZUNO, et al., Institute for Super Material

"SMD 3400" is the large-scaled sputtering system, manufactured and developed for use in Generation 10.5 (G10.5), which mother glass size is approximately 3400×3000 mm, for TFT-LCD production line. "SMD 3400" is composed of Loading/ Unloading position, Loading/Unloading chamber, heating chamber and 2 sputtering chambers. Planer targets of Cu and ITO are mounted respectively on the sputtering chamber in multi-cathode systems. This sputtering system has improved horizontal wave-formed thickness uniformity problem depends on the cathode arrangement by using new-type deposition method, although conventionally film thickness become thicker right in front of the target and thinner at between the targets. This new-type deposition method has successfully introduced to "SMD2400"so far, which established mass production technology to improve luminance unevenness in display due to horizontal wave-formed thickness uniformity. We investigated film thickness uniformity, Rs uniformity, reflectance (for Cu), transmittance (for ITO) and film stress シャッフルカジノ 初回入金ボーナスhe Cu and ITO process using "SMD3400". We obtained film thickness uniformity less than 10％ in both process as we expected by the simulation. We confirmed new-type deposition method improve Rs horizontal distribution. And good Rs uniformity, reflectance, transmittance and film stress were obtained at G10.5 substrate area.

Hirohisa TAKAHASHI et al., Institute of Super Material

For the In-Cell type touch screen panel, a high resistivity transparent electrode that can work as anti-static without affecting touch sensing is required. ULVAC selected Sputtering Process which is high in productivity and suitable for large size and successfully developed a high resistivity transparent conductive oxide electrode satisfying required specification.

Natsuki HASHIMOTO, et al., Future Technology Research Laboratory

We introduce silver nanoparticle ink, namely nanometal ink, which is essential for printed electronics. In recent, flexibility is required シャッフルカジノ 初回入金ボーナスhe field of transparent electrodes for future flexible devices. Although indium tin oxide (ITO) is the most widespread material as transparent electrode, its lack of adequate flexibility and poor conductivity restrain from further development for future devices. We have attempted to make patterns of invisible and high conductive fine silver electrodes by a gravure offset printing method to meet both of transparency and flexibility. Here, silver nanoparticle ink was developed and applied to fabricate fine invisible silver electrodes with the line width of 5 μm. The fabricated electrode pattern of which the line/space is 5 μm / 300 μm has excellent electric conductivity and transparency. The patterned electrode has sheet resistance of sub-10 Ω/ □ , while its transparency is higher than 90.

Junki NAGAKUBO, et al., Future Technology Research Laboratory

In order to obtain semiconductor quantum dots with superior opto-electronic performance, several technologies are required including epitaxial growth, fine particle size control, and ligand control. We have synthesized quantum dot phosphors via these technologies. The quantum dot phosphors showed better color purity (full width at half maximum: 45.0 nm, chromaticity coordinates: 0.177, 0.688) than conventional phosphors such as β -SiAlON. A photoelectric converter using these quantum dots has been fabricated, which shows 16.7％ of external quantum efficiency at 850 nm of infrared light. The result indicates a possibility of developing superior infrared image sensor than conventional organic CMOS image sensors.

Atsushi ITO, Components Division

A quartz crystal microbalance (QCM) is typically used to monitor the vapor deposition of organic materials, and QCM sensors feature a quartz crystal resonator with a resonance frequency of 5 or 6 MHz. When a metal or oxide film forms on a sensor, the rate at which the material adheres varies little. When an organic film forms on a sensor, however, the rate at which the material adheres varies considerably. This causes a problem since it greatly reduces the life of the quartz crystal resonator. The current work used several quartz crystal resonators with different fundamental frequencies to measure electrical and temperature characteristics during formation of an organic film. Results indicated that a quartz cr ystal resonator with a resonance frequency of 4 MHz or lower was better suited to sensing vapor deposition of an organic material than a resonator with a resonance frequency of 5 or 6 MHz.

Shin-ichi IIDA, et al., ULVAC-PHI, INC.

Recently, the applications of TOF-SIMS have expanded into a wide variety of organic materials, because the sensitivity of high mass molecular ions was improved dramatically. However, it was very difficult to determine the chemical formula from the measured mass above m/z 200. The ambiguous peak identification was a significant problem シャッフルカジノ 初回入金ボーナスOF-SIMS. In order to determine the chemical formula as well as detailed chemical structure, we developed the TOF-SIMS instrument equipped with Tandem MS (MS/MS), and applied it to analysis of various organic materials. シャッフルカジノ 初回入金ボーナスhis article, we will introduce this unique instrument, and demonstrate the results of the spectra analysis using MS/MS.