Materials
シャッフルカジノ 入金不要ボーナス
シャッフルカジノ 入金不要ボーナス
シャッフルカジノ 入金不要ボーナス
シャッフルカジノ 入金不要ボーナス
シャッフルカジノ 入金不要ボーナスmiconductor Applications
シャッフルカジノ 入金不要ボーナス must meet ever tougher standards for high quality to produce sub-micron scale and wafer targets in ever larger sizes.
- Low particle
- Good film uniformity
- High usage efficiency
To develop and produce high quality シャッフルカジノ 入金不要ボーナス, Ulvac carefully evaluates which manufacturing method to use for each material to meet the following product quality goals.
Features
- Low-particle targets
ULVAC has developed シャッフルカジノ 入金不要ボーナス that suppress generation of particles that can be the source of problems in the sputtering process.
Gaseous elements are one factor in causing particle emissions especially in aluminum targets and we are working to lower emissions by utilizing a vacuum melting method in the refining and ingot purification processes. - Attaining high uniformity by adjusting the metal microstructure
ULVAC uses manufacturing processes that ensure high uniformity and a fine metal microstructure in most of its targets シャッフルカジノ 入金不要ボーナスmiconductor products including high purity cobalt targets and titanium targets.
Utilizing a fine metal microstructure having a high degree of uniformity for example allows uniform the magnetic flux leakage on the target surface of high purity cobalt targets. - Meticulous quality control system
Integrated process manufacturing at ULVAC takes product characteristics and contours into account during production. Sophisticated analysis/evaluation system such as the GD-MS (glow discharge mass spectrometer) ensure purity along with a high level of quality.
GDMS Analysis/Comparison for Various Tungsten Targets
| Target | Sinter-W |
|---|---|
| Na | ≤ 0.1 |
| K | ≤ 0.1 |
| Mg | - |
| Ca | - |
| Al | ≤ 1 |
| Cr | ≤ 1 |
| Fe | ≤ 1 |
| Ni | ≤ 1 |
| Cu | ≤ 1 |
| Th | ≤ 0.0005 |
| U | ≤ 0.0005 |
| O | ≤ 100 |
| C | ≤ 50 |
(ppm)
Sputtering Targets シャッフルカジノ 入金不要ボーナスmiconductors
| Application Field | Materials | Manufacturing Method | Purpose of Use |
|---|---|---|---|
| Electrode materials | W (シャッフルカジノ 入金不要ボーナス) | Powder sintering | Gate area |
| Co(シャッフルカジノ 入金不要ボーナス) | Melting method | Gate area | |
| Ni(シャッフルカジノ 入金不要ボーナス) | Melting method | Gate area | |
| Ti(シャッフルカジノ 入金不要ボーナス) | Melting method | Lynear, Barrier etc. | |
| Various silicide(4N up) | Powder sintering | ||
| Wiring Materials | Al(シャッフルカジノ 入金不要ボーナス, シャッフルカジノ 入金不要ボーナス5) & Al alloy such as AlCu (シャッフルカジノ 入金不要ボーナス, シャッフルカジノ 入金不要ボーナス5) |
Vacuum melting method | Inter conect |
| Cu(6N) | Melting method | Inter conect | |
| Compound semiconductor materials | Au, Au alloy(4N) | Melting method | Wiring |
| WSi(シャッフルカジノ 入金不要ボーナス) | Powder sintering | Electrode | |
| SiO2(4N,6N) | Artificial/ natural quartz | Insulating material | |
| Mounting & wiring | Al(シャッフルカジノ 入金不要ボーナス, シャッフルカジノ 入金不要ボーナス5)& Al alloy(シャッフルカジノ 入金不要ボーナス, シャッフルカジノ 入金不要ボーナス5) | Vacuum melting method | Wiring |
| Cu(4N) | Melting method | Wiring | |
| Cr(3N) | Powder sintering | Barriers | |
| Precious metal materials | Melting method | Wiring | |
| TiW(4N up) | Powder sintering | Barriers | |
| Ni(4N) | Melting method | Barriers | |
| Capacitor materials | BST | Powder sintering | DRAM/thin film capacitors |
| PZT | Powder sintering | FeRAM | |
| Barrier materials | Ti(4N5) | Melting method | |
| TiW(4N up) | Powder sintering |
Target Material for Mainstream 300mm Wafers
| Target Material | Al-0.5mass%Cu | Ti | Cu | Ta | W |
|---|---|---|---|---|---|
| Purity | シャッフルカジノ 入金不要ボーナス5up (low-U, Th specifications) |
4N5up | 6Nup | 6Nup (except for Nb and W) |
シャッフルカジノ 入金不要ボーナス |
| Backing plate Material | Aluminum or Copper Alloy | Aluminum Alloy | Aluminum Alloy | Aluminum or Copper Alloy | Aluminum alloy or Copper Alloy |
| Bonding Method | Electron Beam Welding, Integrated Part Structure, or Metal Bonding |
Diffusion Bonding | Diffusion Bonding | Diffusion Bonding | Metal Bonding |